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ESM636 PNP Transistor

The ESM636 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ESM636 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM636 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ESM636 transistor as follows.

Circuit diagram symbol of the ESM636 transistor

ESM636 Transistor Specification

Transistor Code ESM636
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.8W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 50MHz

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