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ESM1000 NPN Transistor

The ESM1000 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM1000 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM1000 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM1000 transistor as follows.

Circuit diagram symbol of the ESM1000 transistor

ESM1000 Transistor Specification

Transistor Code ESM1000
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO83
Collector Power Dissipation (Maximum) PC 400W
Collector-Base Voltage (Maximum) VCB 200V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) TJ 200°C
Forward Current Transfer Ratio (hFE Value) 8

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