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DK55A NPN Transistor

The DK55A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the DK55A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The DK55A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the DK55A transistor as follows.

Circuit diagram symbol of the DK55A transistor

DK55A Transistor Specification

Transistor Code DK55A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO251
Collector Power Dissipation (Maximum) PC 53W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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