D45VH10G PNP Transistor

The D45VH10G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the D45VH10G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D45VH10G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the D45VH10G transistor as follows.

D45VH10G Transistor Specification

Transistor Code		D45VH10G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-220
Collector Power Dissipation (Maximum)	PC	83W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	50MHz
Collector Capacitance	CC	275pF

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