D44H11G NPN Transistor

The D44H11G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the D44H11G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The D44H11G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the D44H11G transistor as follows.

D44H11G Transistor Specification

Transistor Code		D44H11G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220
Collector Power Dissipation (Maximum)	PC	70W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	50MHz
Collector Capacitance	CC	90pF

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