CMBA847G NPN Transistor

The CMBA847G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CMBA847G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMBA847G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CMBA847G transistor as follows.

CMBA847G Transistor Specification

Transistor Code		CMBA847G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		400
Transition Frequency	FT	200MHz
Collector Capacitance	CC	3.5pF

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