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BUV56A NPN Transistor

The BUV56A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV56A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV56A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV56A transistor as follows.

Circuit diagram symbol of the BUV56A transistor

BUV56A Transistor Specification

Transistor Code BUV56A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 120W
Collector-Base Voltage (Maximum) VCB 1000V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Forward Current Transfer Ratio (hFE Value) 10

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