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BU326A-4 NPN Transistor

The BU326A-4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU326A-4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU326A-4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU326A-4 transistor as follows.

Circuit diagram symbol of the BU326A-4 transistor

BU326A-4 Transistor Specification

Transistor Code BU326A-4
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 62W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 4MHz

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