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BU312 NPN Transistor

The BU312 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU312 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU312 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU312 transistor as follows.

Circuit diagram symbol of the BU312 transistor

BU312 Transistor Specification

Transistor Code BU312
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 280V
Collector-Emitter Voltage (Maximum) VCE 150V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 15MHz

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