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BU109D NPN Transistor

The BU109D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU109D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU109D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU109D transistor as follows.

Circuit diagram symbol of the BU109D transistor

BU109D Transistor Specification

Transistor Code BU109D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 85W
Collector-Base Voltage (Maximum) VCB 330V
Collector-Emitter Voltage (Maximum) VCE 120V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 7
Transition Frequency FT 10MHz

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