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BTD2114N3 NPN Transistor

The BTD2114N3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD2114N3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD2114N3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD2114N3 transistor as follows.

Circuit diagram symbol of the BTD2114N3 transistor

BTD2114N3 Transistor Specification

Transistor Code BTD2114N3
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code BBW
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 12V
Forward Current Transfer Ratio (hFE Value) 1200
Transition Frequency FT 300MHz
Collector Capacitance CC 9pF

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