The BLD123DL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD123DL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The BLD123DL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the BLD123DL transistor as follows.
| Transistor Code | BLD123DL | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TO126 TO126S TO92 TO92S | |
| Collector Power Dissipation (Maximum) | PC | 25W |
| Collector-Base Voltage (Maximum) | VCB | 400V |
| Collector-Emitter Voltage (Maximum) | VCE | 200V |
| Collector Current (Maximum) | IC | 3A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 9V |
| Forward Current Transfer Ratio (hFE Value) | 10 | |
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