BFY55 NPN Transistor

The BFY55 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFY55 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFY55 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFY55 transistor as follows.

BFY55 Transistor Specification

Transistor Code		BFY55
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	60MHz
Collector Capacitance	CC	12pF

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