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BFS13G NPN Transistor

The BFS13G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFS13G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFS13G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFS13G transistor as follows.

Circuit diagram symbol of the BFS13G transistor

BFS13G Transistor Specification

Transistor Code BFS13G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package U21
Collector Power Dissipation (Maximum) PC 0.06W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 1000
Transition Frequency FT 90MHz
Collector Capacitance CC 7pF

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More Transistors Datasheets in U21 Package

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