BD501B NPN Transistor

The BD501B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD501B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD501B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD501B transistor as follows.

BD501B Transistor Specification

Transistor Code		BD501B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	85V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	4MHz

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