BD241E NPN Transistor

The BD241E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD241E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD241E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD241E transistor as follows.

BD241E Transistor Specification

Transistor Code		BD241E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	3MHz

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