BCY65E9 NPN Transistor

The BCY65E9 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCY65E9 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCY65E9 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCY65E9 transistor as follows.

BCY65E9 Transistor Specification

Transistor Code		BCY65E9
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	125MHz
Collector Capacitance	CC	6pF

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