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BCW65ALT1G NPN Transistor

The BCW65ALT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCW65ALT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCW65ALT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCW65ALT1G transistor as follows.

Circuit diagram symbol of the BCW65ALT1G transistor

BCW65ALT1G Transistor Specification

Transistor Code BCW65ALT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 32V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz
Collector Capacitance CC 12pF

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