AM1011-055 NPN Transistor

The AM1011-055 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the AM1011-055 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The AM1011-055 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the AM1011-055 transistor as follows.

AM1011-055 Transistor Specification

Transistor Code		AM1011-055
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SO36
Collector Power Dissipation (Maximum)	PC	55W
Collector-Base Voltage (Maximum)	VCB	65V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	3.7A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	3.5V
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	1000MHz

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