A1160 PNP Transistor

The A1160 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the A1160 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The A1160 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the A1160 transistor as follows.

A1160 Transistor Specification

Transistor Code		A1160
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92L
Collector Power Dissipation (Maximum)	PC	0.9W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		140
Transition Frequency	FT	140MHz
Collector Capacitance	CC	50pF

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