3DG945M NPN Transistor

The 3DG945M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG945M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG945M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG945M transistor as follows.

3DG945M Transistor Specification

Transistor Code		3DG945M
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		HCRR_HCRQ_HCRP_HCRK
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	150MHz
Collector Capacitance	CC	3pF

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