3DG123S NPN Transistor

The 3DG123S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG123S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG123S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG123S transistor as follows.

3DG123S Transistor Specification

Transistor Code		3DG123S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		H123
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6.5V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	260MHz
Collector Capacitance	CC	5pF

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