3DA10E NPN Transistor

The 3DA10E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DA10E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DA10E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DA10E transistor as follows.

3DA10E Transistor Specification

Transistor Code		3DA10E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	30MHz

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