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3DA10E NPN Transistor

The 3DA10E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DA10E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DA10E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DA10E transistor as follows.

Circuit diagram symbol of the 3DA10E transistor

3DA10E Transistor Specification

Transistor Code 3DA10E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 200V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 30MHz

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