2SD2560P NPN Transistor

The 2SD2560P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD2560P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD2560P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD2560P transistor as follows.

2SD2560P Transistor Specification

Transistor Code		2SD2560P
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3-P
Collector Power Dissipation (Maximum)	PC	130W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		6500
Transition Frequency	FT	70MHz
Collector Capacitance	CC	120pF

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