2SD1816Q NPN Transistor

The 2SD1816Q is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1816Q transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1816Q transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1816Q transistor as follows.

2SD1816Q Transistor Specification

Transistor Code		2SD1816Q
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	180MHz
Collector Capacitance	CC	40pF

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