2SD1409O NPN Transistor

The 2SD1409O is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1409O transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1409O transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1409O transistor as follows.

2SD1409O Transistor Specification

Transistor Code		2SD1409O
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Collector Capacitance	CC	35pF

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