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2SB1166R PNP Transistor

The 2SB1166R is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1166R transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1166R transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1166R transistor as follows.

Circuit diagram symbol of the 2SB1166R transistor

2SB1166R Transistor Specification

Transistor Code 2SB1166R
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 130MHz
Collector Capacitance CC 95pF

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