2SB1110D PNP Transistor

The 2SB1110D is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1110D transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1110D transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1110D transistor as follows.

2SB1110D Transistor Specification

Transistor Code		2SB1110D
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		160
Transition Frequency	FT	140MHz
Collector Capacitance	CC	5.5pF

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