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2SA812M7 PNP Transistor

The 2SA812M7 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA812M7 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA812M7 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA812M7 transistor as follows.

Circuit diagram symbol of the 2SA812M7 transistor

2SA812M7 Transistor Specification

Transistor Code 2SA812M7
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO236
Transistor SMD Code M7
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 300
Transition Frequency FT 90MHz

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