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2N965 PNP Transistor

The 2N965 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N965 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N965 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N965 transistor as follows.

Circuit diagram symbol of the 2N965 transistor

2N965 Transistor Specification

Transistor Code 2N965
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO18
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 12V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.15A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 300MHz
Collector Capacitance CC 4pF

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