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2N5552-1 NPN Transistor

The 2N5552-1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5552-1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5552-1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5552-1 transistor as follows.

Circuit diagram symbol of the 2N5552-1 transistor

2N5552-1 Transistor Specification

Transistor Code 2N5552-1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO31
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 30MHz
Collector Capacitance CC 250pF

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