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2N5551CSM NPN Transistor

The 2N5551CSM is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5551CSM transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5551CSM transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5551CSM transistor as follows.

Circuit diagram symbol of the 2N5551CSM transistor

2N5551CSM Transistor Specification

Transistor Code 2N5551CSM
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package LCC1
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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