2N5322GN PNP Transistor

The 2N5322GN is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N5322GN transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5322GN transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N5322GN transistor as follows.

2N5322GN Transistor Specification

Transistor Code		2N5322GN
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	75V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		75
Transition Frequency	FT	50MHz
Collector Capacitance	CC	40pF

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