2N4966 NPN Transistor

The 2N4966 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N4966 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N4966 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N4966 transistor as follows.

2N4966 Transistor Specification

Transistor Code		2N4966
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		45
Transition Frequency	FT	40MHz
Collector Capacitance	CC	9pF

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