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2N3859A NPN Transistor

The 2N3859A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N3859A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N3859A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N3859A transistor as follows.

Circuit diagram symbol of the 2N3859A transistor

2N3859A Transistor Specification

Transistor Code 2N3859A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO98-1
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 90MHz
Collector Capacitance CC 10pF

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