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2N3055SD NPN Transistor

The 2N3055SD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N3055SD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N3055SD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N3055SD transistor as follows.

Circuit diagram symbol of the 2N3055SD transistor

2N3055SD Transistor Specification

Transistor Code 2N3055SD
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 115W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 0.8MHz

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