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2N1382GN PNP Transistor

The 2N1382GN is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1382GN transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1382GN transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1382GN transistor as follows.

Circuit diagram symbol of the 2N1382GN transistor

2N1382GN Transistor Specification

Transistor Code 2N1382GN
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO5
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 75°C
Emitter-Base Voltage (Maximum) VEB 15V
Forward Current Transfer Ratio (hFE Value) 75
Transition Frequency FT 0.4MHz

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