2N1180 PNP Transistor

The 2N1180 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1180 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1180 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1180 transistor as follows.

2N1180 Transistor Specification

Transistor Code		2N1180
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO45
Collector Power Dissipation (Maximum)	PC	0.08W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	100°C
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	50MHz
Collector Capacitance	CC	4pF

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