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SI1031R MOSFET Transistor

The SI1031R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1031R transistor as follows.

Circuit diagram symbol of the SI1031R transistor

SI1031R Transistor Specification

Transistor Code SI1031R
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC-75A
Transistor SMD Code H
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 6V
Drain Current (Maximum) ID 0.14A
Drain-Source On-State Resistance (Maximum) RDS(on) 8Ohm
Power Dissipation (Maximum) PD 0.25W
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 1.2V

SI1031R MOSFET Transistor Overview

The SI1031R is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SC-75A package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SI1031R MOSFET

Followings are the key electrical characteristics of the SI1031R MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SI1031R MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SI1031R MOSFET transistor is 6V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SI1031R MOSFET transistor is 0.14A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SI1031R MOSFET transistor when the transistor is fully turned on is 8 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SI1031R MOSFET transistor can comfortably transfer into heat without breaking is 0.25W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SI1031R MOSFET transistor is switched on is 30nS. This is the rate at which SI1031R MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SI1031R MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SI1031R MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SI1031R MOSFET transistor. You can download the official SI1031R MOSFET transistor datasheet to get more infromation about this transistor.

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