SI1012CR MOSFET Transistor

The SI1012CR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1012CR transistor as follows.

SI1012CR Transistor Specification

Transistor Code		SI1012CR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-75A
Transistor SMD Code		K*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.396Ohm
Power Dissipation (Maximum)	PD	0.24W
Drain-Source Capacitance		14pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1V

SI1012CR MOSFET Transistor Overview

The SI1012CR is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SC-75A package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SI1012CR MOSFET

Followings are the key electrical characteristics of the SI1012CR MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SI1012CR MOSFET transistor is 20V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the SI1012CR MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SI1012CR MOSFET transistor is 0.63A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SI1012CR MOSFET transistor when the transistor is fully turned on is 0.396 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the SI1012CR MOSFET transistor can comfortably transfer into heat without breaking is 0.24W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the SI1012CR MOSFET transistor is 14pF. This value influences to the switching speed of the SI1012CR MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the SI1012CR MOSFET transistor is switched on is 16nS. This is the rate at which SI1012CR MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SI1012CR MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SI1012CR MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SI1012CR MOSFET transistor. You can download the official SI1012CR MOSFET transistor datasheet to get more infromation about this transistor.

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