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SI1012R MOSFET Transistor

The SI1012R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1012R transistor as follows.

Circuit diagram symbol of the SI1012R transistor

SI1012R Transistor Specification

Transistor Code SI1012R
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-75A
Transistor SMD Code C
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 6V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 0.15W
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 0.9V

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