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NTLJD3119C MOSFET Transistor

The NTLJD3119C is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTLJD3119C transistor as follows.

Circuit diagram symbol of the NTLJD3119C transistor

NTLJD3119C Transistor Specification

Transistor Code NTLJD3119C
Transistor Type MOSFET
Control Channel Type NP-Channel
Package WDFN6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.037Ohm
Power Dissipation (Maximum) PD 2.3W

NTLJD3119C MOSFET Transistor Overview

Key Electrical Characteristics of the NTLJD3119C MOSFET

Followings are the key electrical characteristics of the NTLJD3119C MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in NTLJD3119C MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the NTLJD3119C MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the NTLJD3119C MOSFET transistor is 4.6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of NTLJD3119C MOSFET transistor when the transistor is fully turned on is 0.037 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the NTLJD3119C MOSFET transistor can comfortably transfer into heat without breaking is 2.3W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the NTLJD3119C MOSFET transistor is switched on is . This is the rate at which NTLJD3119C MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the NTLJD3119C MOSFET transistor. You can download the official NTLJD3119C MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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