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NTLJD3115P MOSFET Transistor

The NTLJD3115P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTLJD3115P transistor as follows.

Circuit diagram symbol of the NTLJD3115P transistor

NTLJD3115P Transistor Specification

Transistor Code NTLJD3115P
Transistor Type MOSFET
Control Channel Type P-Channel
Package WDFN6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.075Ohm
Power Dissipation (Maximum) PD 1.47W

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