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MCP87018 MOSFET Transistor

The MCP87018 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MCP87018 transistor as follows.

Circuit diagram symbol of the MCP87018 transistor

MCP87018 Transistor Specification

Transistor Code MCP87018
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN5X6
Transistor SMD Code 87018
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0019Ohm
Power Dissipation (Maximum) PD 2.2W
Drain-Source Capacitance 1305pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28.3nS
Gate-Threshold Voltage (Maximum) 1.6V
Total Gate Charge 32.5nC

MCP87018 MOSFET Transistor Overview

The MCP87018 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PDFN5X6 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the MCP87018 MOSFET

Followings are the key electrical characteristics of the MCP87018 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in MCP87018 MOSFET transistor is 25V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the MCP87018 MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the MCP87018 MOSFET transistor is 50A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of MCP87018 MOSFET transistor when the transistor is fully turned on is 0.0019 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the MCP87018 MOSFET transistor can comfortably transfer into heat without breaking is 2.2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the MCP87018 MOSFET transistor is 1305pF. This value influences to the switching speed of the MCP87018 MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the MCP87018 MOSFET transistor is switched on is 28.3nS. This is the rate at which MCP87018 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the MCP87018 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of MCP87018 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the MCP87018 MOSFET transistor. You can download the official MCP87018 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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