free stats

Home » Electronics » FET » AP3P2R2CDT Transistor

AP3P2R2CDT MOSFET Transistor

The AP3P2R2CDT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P2R2CDT transistor as follows.

Circuit diagram symbol of the AP3P2R2CDT transistor

AP3P2R2CDT Transistor Specification

Transistor Code AP3P2R2CDT
Transistor Type MOSFET
Control Channel Type P-Channel
Package PDFN5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 39.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0022Ohm
Power Dissipation (Maximum) PD 5W
Drain-Source Capacitance 2100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 3V

AP3P2R2CDT MOSFET Transistor Overview

The AP3P2R2CDT is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a PDFN5X6 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the AP3P2R2CDT MOSFET

Followings are the key electrical characteristics of the AP3P2R2CDT MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AP3P2R2CDT MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AP3P2R2CDT MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AP3P2R2CDT MOSFET transistor is 39.2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AP3P2R2CDT MOSFET transistor when the transistor is fully turned on is 0.0022 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AP3P2R2CDT MOSFET transistor can comfortably transfer into heat without breaking is 5W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AP3P2R2CDT MOSFET transistor is 2100pF. This value influences to the switching speed of the AP3P2R2CDT MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AP3P2R2CDT MOSFET transistor is switched on is 16nS. This is the rate at which AP3P2R2CDT MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AP3P2R2CDT MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AP3P2R2CDT MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the AP3P2R2CDT MOSFET transistor. You can download the official AP3P2R2CDT MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

AP2604CDT AP2604CDT MOSFET Transistor AP3NR68CDT AP3NR68CDT MOSFET Transistor AP4618CDT AP4618CDT MOSFET Transistor AP4N1R1CDT-A AP4N1R1CDT-A MOSFET Transistor AP6N1R7CDT AP6N1R7CDT MOSFET Transistor AP6N2R0CDT AP6N2R0CDT MOSFET Transistor AP8604CDT AP8604CDT MOSFET Transistor FTK35N03PDFN56 FTK35N03PDFN56 MOSFET Transistor MCP87018 MCP87018 MOSFET Transistor MCP87022 MCP87022 MOSFET Transistor MCP87030 MCP87030 MOSFET Transistor MCP87050 MCP87050 MOSFET Transistor SP2103 SP2103 MOSFET Transistor SP2106 SP2106 MOSFET Transistor SP2107 SP2107 MOSFET Transistor SP2108 SP2108 MOSFET Transistor SP2110 SP2110 MOSFET Transistor SP2700 SP2700 MOSFET Transistor SP2702 SP2702 MOSFET Transistor SP3901 SP3901 MOSFET Transistor