AP6N2R0CDT MOSFET Transistor

The AP6N2R0CDT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N2R0CDT transistor as follows.

AP6N2R0CDT Transistor Specification

Transistor Code		AP6N2R0CDT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	39A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		3600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		4V

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