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IPB009N03LG MOSFET Transistor

The IPB009N03LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB009N03LG transistor as follows.

Circuit diagram symbol of the IPB009N03LG transistor

IPB009N03LG Transistor Specification

Transistor Code IPB009N03LG
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 180A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.00095Ohm
Power Dissipation (Maximum) PD 250W
Total Gate Charge 227nC

IPB009N03LG MOSFET Transistor Overview

The IPB009N03LG is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a D2PAK_TO263 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IPB009N03LG MOSFET

Followings are the key electrical characteristics of the IPB009N03LG MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IPB009N03LG MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IPB009N03LG MOSFET transistor is 180A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IPB009N03LG MOSFET transistor when the transistor is fully turned on is 0.00095 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IPB009N03LG MOSFET transistor can comfortably transfer into heat without breaking is 250W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IPB009N03LG MOSFET transistor is switched on is . This is the rate at which IPB009N03LG MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the IPB009N03LG MOSFET transistor. You can download the official IPB009N03LG MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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