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IPB011N04LG MOSFET Transistor

The IPB011N04LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB011N04LG transistor as follows.

Circuit diagram symbol of the IPB011N04LG transistor

IPB011N04LG Transistor Specification

Transistor Code IPB011N04LG
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK_TO263
Drain-Source Voltage (Maximum) VDS 40V
Drain Current (Maximum) ID 180A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0011Ohm
Power Dissipation (Maximum) PD 250W
Total Gate Charge 260nC

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