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FDMA1032CZ MOSFET Transistor

The FDMA1032CZ is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMA1032CZ transistor as follows.

Circuit diagram symbol of the FDMA1032CZ transistor

FDMA1032CZ Transistor Specification

Transistor Code FDMA1032CZ
Transistor Type MOSFET
Control Channel Type NP-Channel
Package MICROFET
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.068Ohm
Power Dissipation (Maximum) PD 1.4W
Operating Junction Temperature (Maximum) 150°C

FDMA1032CZ MOSFET Transistor Overview

Key Electrical Characteristics of the FDMA1032CZ MOSFET

Followings are the key electrical characteristics of the FDMA1032CZ MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FDMA1032CZ MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FDMA1032CZ MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FDMA1032CZ MOSFET transistor is 3.7A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FDMA1032CZ MOSFET transistor when the transistor is fully turned on is 0.068 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FDMA1032CZ MOSFET transistor can comfortably transfer into heat without breaking is 1.4W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FDMA1032CZ MOSFET transistor is switched on is . This is the rate at which FDMA1032CZ MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDMA1032CZ MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FDMA1032CZ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDMA1032CZ MOSFET transistor. You can download the official FDMA1032CZ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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