FDMA1025P MOSFET Transistor

The FDMA1025P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMA1025P transistor as follows.

FDMA1025P Transistor Specification

Transistor Code		FDMA1025P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICROFET
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.155Ohm
Power Dissipation (Maximum)	PD	1.4W
Operating Junction Temperature (Maximum)		150°C

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